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Samsung M321R4GA0BB0‑CQK 32GB DDR5 4800 RDIMM Server RAM

Samsung M321R4GA0BB0‑CQK is 32GB DDR5‑4800 Registered ECC RDIMM server memory, 1Rx4 single‑rank x4, 1.1V low‑voltage, 288‑pin form factor. Featuring ECC error correction, it delivers high‑speed reliable performance for latest‑generation enterprise servers, virtualization and data center hardware. Not compatible with consumer desktop and notebook motherboards。
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  • M321R4GA0BB0‑CQK

M321R4GA0BB0‑CQK is Samsung enterprise‑grade DDR5 RDIMM memory module with 32GB capacity, running at 4800MHz (PC5‑38400), CL40 latency, adopting 1Rx4 single‑rank x4 chip layout. Equipped with register buffering and ECC error‑correcting technology, it automatically detects and repairs memory bit errors, reducing system crash risks under long‑term heavy‑load server operation.

Operating at DDR5 standard 1.1V low voltage, it optimizes power efficiency for modern data center clusters. This 288‑pin RDIMM module only works on servers supporting DDR5 registered memory. Widely used in new‑generation rack‑mount servers, virtualization hosts, database servers and high‑performance computing scenarios. It cannot be used on ordinary desktop and notebook systems。msung Se...

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M321R4GA0BB0‑CQK Samsung Server DDR5 ECC Memory Features

1. 32GB High‑Density Next‑Generation Enterprise‑Grade Registered Memory

The M321R4GA0BB0‑CQK is an authentic Samsung new‑generation enterprise‑grade DDR5 RDIMM memory module built with original industrial DRAM integrated circuit chips. Featuring 32GB single‑module high capacity and mature 1Rx4 single‑rank architecture, it is engineered for latest‑generation enterprise rack servers, high‑performance data center computing nodes, AI‑assisted virtualization clusters and core database hosts. It delivers stable large‑capacity memory expansion for large‑scale virtual machine deployment, mass‑data concurrent computation and 24/7 non‑stop core business workloads, satisfying high‑reliability continuous‑operation requirements of modern DDR5‑based enterprise data center infrastructure。

2. DDR5 4800MHz Ultra‑High‑Speed Bandwidth & 1.1V Low‑Power Architecture

This enterprise server memory supports DDR5 4800MHz (PC5‑38400R) high‑standard bandwidth, greatly improving server multi‑thread parallel processing efficiency, mass‑data read‑write throughput and instant system response under continuous medium‑to‑heavy loads. Adopting advanced DDR5 industry‑standard 1.1V low‑voltage design, it effectively reduces long‑term running power consumption and thermal accumulation, realizing energy‑saving and stable 24‑hour uninterrupted operation for next‑generation enterprise core server hardware。

3. High‑Precision ECC REG Error Correction For Enterprise Data Integrity

Equipped with upgraded ECC real‑time error correction and Register signal buffering integrated circuit technology, M321R4GA0BB0‑CQK instantly detects and corrects single‑bit and multi‑bit data errors during long‑term high‑frequency server operation. It effectively prevents system hang‑up, server crash, core service suspension and database data deviation caused by high‑temperature cabinet environment, complex electromagnetic interference and long‑term hardware aging, comprehensively enhancing server system stability, data accuracy and business continuity。

4. 1Rx4 Single‑Rank Optimized DDR5 Enterprise Signal Design

Adopting professional 1Rx4 single‑rank high‑efficiency structure customized for DDR5 enterprise RDIMM applications, this memory module provides optimized independent data transmission channels and excellent multi‑task concurrent processing capability. It optimizes multi‑channel signal scheduling logic, lowers transmission latency and signal attenuation, maintaining full‑speed 4800MHz performance without degradation under sustained server high‑load. It perfectly matches large‑scale virtualization cluster operation, high‑concurrency database query and complex cyclic enterprise computing tasks。

5. Industrial Wide‑Temperature Adaptability & Broad Cross‑Platform Compatibility

Manufactured under strict Samsung enterprise IC production standards, the module runs stably within 0°C‑85°C wide temperature range, adapting to high‑density, high‑interference data‑center cabinet conditions. With ultra‑low failure rate and excellent cross‑brand compatibility, it supports plug‑and‑play rapid upgrade and large‑batch capacity expansion for mainstream DDR5‑supported enterprise rack servers and blade servers

Technical Specifications of M321R4GA0BB0‑CQK Samsung DDR5 ECC RDIMM

Item

Specifications

Part Number

M321R4GA0BB0‑CQK

Product Series

Samsung Enterprise DDR5 ECC RDIMM Integrated Circuit

Capacity

32GB

Memory Type

DDR5 ECC Registered RDIMM

Frequency

4800MHz (PC5‑38400R)

Voltage

1.1V Low Voltage

Rank & Organization

1Rx4 Single Rank

Timing Parameter

CL40 40‑40‑40

Pin Definition

288‑Pin Standard RDIMM

Core Technology

ECC Real‑Time Error Correction, Register Signal Buffering, 1Rx4 Single‑Rank Architecture, DDR5 Low‑Power DRAM Integrated Circuit

Working Temperature

0°C ~ 85°C Industrial Wide Temperature

Form Factor

Standard Enterprise Server RDIMM

Core Advantages

32GB high enterprise capacity, 4800MHz ultra‑high DDR5 bandwidth, 1Rx4 single‑rank, ECC REG error correction, low‑power IC design, wide‑temp resistance, 24/7 high‑load stable operation

Application Grade

Next‑Gen Enterprise Rack Servers, Data Center Nodes, Virtualization Clusters, Database Servers, High‑Load Cloud Computing & AI‑Assisted Hosts

Industrial Applications of M321R4GA0BB0‑CQK Samsung Integrated Circuit Memory

1. Next‑Generation Enterprise Server Hardware Upgrade

The M321R4GA0BB0‑CQK serves as high‑performance integrated‑circuit memory solution for DDR5 enterprise server hardware iteration. 32GB large capacity and 4800MHz ultra‑high‑speed bandwidth resolve memory capacity and bandwidth bottlenecks under heavy‑load computing scenarios. The 1Rx4 single‑rank design guarantees stable multi‑task parallel processing for core business systems, big‑data analysis and high‑frequency transaction processing during long‑time full‑load running。

2. Large‑Scale Data Center & Virtualization Cluster Deployment

Benefiting from ECC REG error‑correcting integrated circuit design, this module fits new‑generation data‑center computing nodes and high‑density virtualization cluster deployment. It supports stable parallel operation of multiple virtual machines and large‑scale container service clusters. Real‑time error correction eliminates data faults and signal jitter under heavy concurrency, greatly improving overall data‑center stability and long‑term service continuity。

3. Enterprise Core Database & High‑Concurrent Transaction Processing

This reliable RDIMM integrated‑circuit memory provides high‑capacity stable memory resource for enterprise database servers and high‑concurrency transaction processing systems. 4800MHz high‑efficiency bandwidth adapts to frequent data query, massive read‑write and statistical computing tasks of large enterprise databases. It keeps accurate data output for 24‑7 continuous operation and avoids business anomalies and data deviation caused by memory instability。

4. High‑Load Cloud Computing & AI‑Assisted Enterprise IT Infrastructure

With industrial‑grade wide‑temperature and anti‑interference performance, this IC memory module copes with harsh high‑density cabinet environments. Ultra‑low failure rate reduces operation‑maintenance frequency and operational risks, ensuring reliable running of cloud computing and AI‑enhanced core enterprise IT infrastructure nodes。

5. Enterprise Cost‑Effective DDR5 Server Hardware Iteration

As mature next‑generation server‑grade integrated circuit memory component, M321R4GA0BB0‑CQK offers good cross‑brand DDR5 server compatibility and plug‑and‑play upgrade capability. It helps enterprises implement cost‑effective server hardware update, lift concurrent processing and computing performance, and build energy‑saving, low‑maintenance and high‑stability modern enterprise data‑center infrastructure。

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