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Samsung M471A2G43AB2-CWE 16GB DDR4 3200 SODIMM Laptop RAM

Samsung M471A2G43AB2‑CWE is 16GB DDR4‑3200 Non‑ECC Unbuffered SO‑DIMM laptop memory. It adopts 1Rx8 single‑rank design with 1.2V low‑power consumption, 260‑pin small‑outline form factor. Optimized for notebook, mini‑PC and all‑in‑one PC upgrades, delivers stable multitasking performance for office, gaming and content creation work. Not compatible with desktop DIMM or server platforms.
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  • M471A2G43AB2‑CWE

M471A2G43AB2‑CWE is Samsung consumer‑grade SO‑DIMM memory module with 16GB capacity, running at 3200MHz (PC4‑25600), CL22 latency. It uses 1Rx8 single‑rank x8 chip configuration, non‑ECC unbuffered architecture, 260‑pin small‑outline dimension for compact devices with limited internal space.

Working at standard DDR4 1.2V low voltage, it reduces power draw and heat generation for mobile devices. It supports mainstream DDR4 notebook, mini PC and all‑in‑one systems, improves system responsiveness when running multiple software, games and media editing applications.

This is laptop‑specific SO‑DIMM module. It cannot fit standard desktop long DIMM slots or server motherboards. The original part status is EOL (end‑of‑life), widely circulated as replacement and upgrade spare parts for second‑hand hardware market

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M471A2G43AB2‑CWE Samsung DDR4 SO‑DIMM Memory Features▼

1. 16GB Mainstream‑Capacity Compact SO‑DIMM Memory

The M471A2G43AB2‑CWE is original Samsung high‑reliability DDR4 SO‑DIMM memory module built with genuine DRAM integrated circuit chips. Adopting compact small‑outline form factor and mature 1Rx8 single‑rank architecture, it is specially engineered for notebook laptops, all‑in‑one desktops, mini‑PCs and compact workstations. It delivers reliable large‑capacity memory expansion for multi‑task office processing, content creation, mainstream gaming and daily continuous computing workloads, satisfying memory upgrade demands for compact space‑limited host equipmentSamsung Se...

2. DDR4 3200MHz High‑Speed Bandwidth & 1.2V Low‑Power Consumption

This compact memory supports DDR4 3200MHz (PC4‑25600S) high‑efficiency bandwidth, greatly improving system multi‑thread response speed, application loading efficiency and file read‑write performance. It maintains smooth multitasking performance under daily medium‑load operation. Adopting industry‑standard 1.2V low‑voltage design, it effectively reduces power draw and heat generation, helping notebook devices balance performance and battery endurance for long‑time stable daily operation。

3. Stable Non‑ECC Unbuffered Signal Transmission Architecture

Equipped with high‑quality unbuffered memory integrated‑circuit design, M471A2G43AB2‑CWE achieves low signal latency and excellent signal integrity for consumer compact hosts. Optimized signal processing circuit reduces transmission interference under daily operating environment, avoiding system lag, program crash and abnormal restart caused by signal fluctuation. It brings consistent and reliable performance for long‑time consumer‑grade continuous computing scenarios。

4. 1Rx8 Single‑Rank Optimized Compact Memory Layout

Adopting professional 1Rx8 single‑rank streamlined architecture customized for SO‑DIMM size constraints, this memory module realizes compact PCB layout without sacrificing signal performance. It keeps stable full‑speed 3200MHz output under regular system loads, well compatible with mainstream notebook BIOS memory timing strategies. Perfect for daily office work, image‑video content creation, mainstream gaming and multi‑application parallel running tasksSamsung Se...

5. Commercial‑Grade Temperature Adaptability & Wide Cross‑Device Compatibility

Manufactured according to Samsung strict DRAM production standards, the module runs stably within 0°C‑85°C commercial temperature range, adapting to daily notebook operating temperature changes. With ultra‑low failure rate and broad compatibility, it supports plug‑and‑play quick upgrade for most DDR4‑based notebooks, all‑in‑one PCs and mini hosts, realizing convenient batch memory expansion for compact computing hardware。

Technical Specifications of M471A2G43AB2‑CWE Samsung DDR4 SO‑DIMM

Item

Specifications

Part Number

M471A2G43AB2‑CWE

Product Series

Samsung DDR4 Non‑ECC SO‑DIMM Integrated Circuit

Capacity

16GB

Memory Type

DDR4 Non‑ECC Unbuffered SO‑DIMM

Frequency

3200MHz (PC4‑25600S)

Voltage

1.2V Low Voltage

Rank & Organization

1Rx8 Single Rank

Timing Parameter

CL22 22‑22‑22

Pin Definition

260‑Pin Standard SO‑DIMM

Core Technology

Unbuffered Signal Circuit, 1Rx8 Single‑Rank Compact Layout, DDR4 Low‑Power DRAM Integrated Circuit

Working Temperature

0°C ~ 85°C Commercial Temperature

Form Factor

Standard 260‑Pin Small Outline SO‑DIMM

Core Advantages

16GB mainstream capacity, 3200MHz high‑speed bandwidth, compact SO‑DIMM form, 1Rx8 single‑rank, low‑power IC design, wide device compatibility, plug‑and‑play upgrade

Application Grade

Notebook Laptops, All‑In‑One PCs, Mini‑PCs, Compact Workstations, Space‑Limited Compact Computing Devices

Industrial & Consumer Applications of M471A2G43AB2‑CWE Samsung Integrated Circuit Memory

1. Notebook Laptop Performance Upgrade

The M471A2G43AB2‑CWE acts as high‑cost‑performance DRAM integrated‑circuit memory upgrade solution for mainstream DDR4 notebooks. 16GB ample capacity and 3200MHz high bandwidth effectively resolve insufficient memory bottlenecks when running multiple office software, browsers and creative software simultaneously. The compact SO‑DIMM form fits internal space constraints of notebook hardware, realizing easy hardware performance improvement for end‑users。

2. All‑In‑One PC & Mini‑PC Hardware Expansion

Thanks to small‑outline dimension and low‑power characteristic, this Samsung memory module fits all‑in‑one desktops and mini‑PCs with limited internal installation space. It steadily supports daily office workflow, light multimedia editing and multi‑window concurrent operation, delivering stable system responsiveness for compact form‑factor computing equipment。

3. Compact Workstation & Light Content‑Creation Equipment

This reliable SO‑DIMM integrated‑circuit memory provides stable memory resource for mobile compact workstations and light‑duty content‑creation devices. 3200MHz high‑speed bandwidth adapts to image processing, light video editing and multi‑layer design software operation. It maintains fluent system output during long‑time medium‑load creative work, improving user operating experience。

4. Mainstream Consumer Gaming & Multi‑Task Computing Scenarios

With low‑latency unbuffered circuit design, this memory module meets mainstream consumer gaming and multi‑task computing requirements. It supports smooth running of popular games while keeping background applications active, reducing loading delay and system stutter, bringing stable daily entertainment and computing performance。

5. Cost‑Effective Compact‑Host Hardware Iteration

As mature consumer‑grade DRAM integrated‑circuit memory component, M471A2G43AB2‑CWE has broad cross‑brand host compatibility and plug‑and‑play installation. It helps users complete low‑cost hardware iteration for notebooks and compact PCs, lifting overall system multitasking capacity, and builds low‑power, high‑stability daily‑use compact computing infrastructure。

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