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The B5817WS is a surface-mount Schottky barrier diode housed in a compact SOD-323F package. It is specified for a 20 V DC reverse voltage and 1 A average rectified forward current, with a typical forward voltage of 450 mV at 1 A. The Schottky metal-semiconductor junction provides faster switching recovery than conventional silicon PN-junction diodes, which reduces switching losses in high-frequency rectification and polarity protection circuits. The SOD-323F package measures approximately 2.5 mm × 1.3 mm × 0.9 mm, making it suitable for space-constrained PCB designs in portable electronics, power banks, sensor modules, and smart home devices. The B5817WS is intended for commercial and industrial buyers who require a small-footprint, low-forward-drop diode for low-voltage, high-frequency applications.
The B5817WS exhibits a forward voltage of 450 mV at a forward current of 1 A. This lower Vf compared with standard silicon diodes reduces conduction loss in rectification circuits, which contributes to higher overall power conversion efficiency in low-voltage designs such as 3.7 V lithium-battery-powered modules.
The diode is rated for a 20 V DC reverse voltage and can withstand a non-repetitive peak surge current (Ifsm) of 10 A. This surge rating provides margin for transient current events during power-up, inrush, or inductive load switching, helping protect downstream components from voltage spikes.
The Schottky barrier construction inherently exhibits negligible reverse recovery time, allowing the B5817WS to operate in high-frequency switching applications without the recovery losses associated with PN-junction diodes. This characteristic is useful in DC-DC converter secondary rectification, high-frequency signal clamping, and switching power supply circuits operating above several hundred kilohertz.
The SOD-323F surface-mount package is compatible with standard tape-and-reel packaging and automated pick-and-place assembly lines. The gull-wing lead form supports standard reflow soldering profiles, enabling high-volume OEM production with consistent solder joint quality.
Product Category | Schottky Barrier Diode |
|---|---|
Diode Configuration | Single Independent Diode |
Forward Voltage (Vf) | 450 mV @ 1 A |
DC Reverse Voltage (Vr) | 20 V |
Average Rectified Current (Io) | 1 A |
Reverse Current (Ir) | 1 mA @ 20 V |
Operating Junction Temperature Range | -55°C to +150°C |
Non-repetitive Peak Surge Current (Ifsm) | 10 A |
The B5817WS is used in low-voltage high-frequency inverter circuits where fast recovery and low forward drop are required, such as compact DC-AC modules powered by single-cell lithium batteries. In power supply input ports, it serves as a reverse-polarity protection diode to block current flow when the supply terminals are reversed, safeguarding main control chips and battery packs. For inductive load circuits including small relays, miniature motors, and solenoid drivers, the diode functions as a freewheeling or snubber element that absorbs back-EMF transients. Additional applications include high-speed signal rectification and waveform shaping in IoT sensor nodes, handheld test instruments, and remote control receivers, as well as compact USB charging modules and smart home sensor boards where PCB area is limited.
The B5817WS is rated for 20 V DC reverse voltage. For applications requiring 30 V or 40 V reverse withstand, separate part numbers in the same product series should be selected.
The B5817WS is supplied in an SOD-323F surface-mount package, which is compatible with standard automated SMT assembly and tape-and-reel packaging.
The typical forward voltage is 450 mV at a forward current of 1 A, which contributes to lower conduction loss in low-voltage rectification designs.
The B5817WS operates within a junction temperature range of -55°C to +150°C, covering most commercial and light industrial environments.
